Effect of functionally graded structure design on durability and thermal insulation capacity of plasma-sprayed thick thermal barrier coating

This paper aimed to design and optimize the structure of a thick thermal barrier coating by adding graded layers to achieve a balance between high thermal insulation capacity and durability. To this end, conventional TBC, conventional TTBC, and functionally graded TTBCs were deposited on the superalloy substrate by air plasma spraying. To determine the quality of the bond strength of the coatings, the bonding strength was measured. The durability of coatings was evaluated by isothermal oxidation and thermal shock tests. Then, at a temperature of 1000 °C, the thermal insulation capacity of the coatings was carried out. The microstructure of the coatings was characterized by a scanning electron microscope. The results showed that the thickness of the TGO layer formed on the bond coat in the conventional TBC and TTBC under the oxidation test at 1000 °C after 150 h was 2.79 and 2.11 μm, respectively, whereas, in the functionally graded TTBC samples, no continuous TGO layer was observed as a result of internal oxidation. The functionally graded TTBC presented higher durability than conventional TTBC due to improved bonding strength, thermal shock resistance, and the lack of a TGO layer at the bond/top coat interface. Also, the thermal insulation capacity of the functionally graded TTBC (with 1000 μm thickness of YSZ coating) was better than TTBC.     

Fabrication of oxide-based near infrared-shielding coatings for a smart window to prevent infrared-induced photoaging in human skin

Oxide-based near infrared (IR)-shielding coatings consisting of quarter‐wave stacks of oxygen-deficient tantalum oxide (Ta₂O_5?x) and silicon oxide (SiO₂) multilayers and tin-doped indium oxide (In₂O₃) (ITO) films with the thicknesses of 200–600 nm can block the passage of IR-A (wavelength: 760–1400 nm) and IR-B (wavelength: 1400–3000 nm) radiation, respectively. In this study, the optical properties and microstructure of these oxide-based IR-shielding coatings were investigated. Transmission electron microscopy images indicated that amorphous Ta₂O_5?x/amorphous SiO₂ multilayers were uniform and dense. ITO films were found to be highly crystalline and show carrier concentrations of up to 7.1 × 10²⁰ cm^?3, resulting in the strong IR-B optical absorption due to the plasma excitation of the free carriers. Oxide-based IR-shielding coatings with an ITO thickness of 420 nm were found to have near-IR shielding rates of >90% and an average visible light transmittance of >70%. The effects of IR on human keratinocytes were studied to evaluate the IR-induced photoaging in human skin. It was found that the downregulation of cellular proliferation and the enhancement of senescence-associated β-galactosidase activity induced by IR irradiation were significantly inhibited by oxide-based IR-shielding coatings. Thus, this study provides a facile method for the development of coatings for smart windows with high IR-shielding ability and high visible light transmittance.     

Modulation of electrical transport in calcium cobaltite ceramics and thick films through microstructure control and doping

Ca₃Co₄O₉ is a promising p-type thermoelectric oxide material having intrinsically low thermal conductivity. With low cost and opportunities for automatic large scale production, thick film technologies offer considerable potential for a new generation of micro-sized thermoelectric coolers or generators. Here, based on the chemical composition optimized by traditional solid state reaction for bulk samples, we present a viable approach to modulating the electrical transport properties of screen-printed calcium cobaltite thick films through control of the microstructural evolution by optimized heat-treatment. XRD and TEM analysis confirmed the formation of high-quality calcium cobaltite grains. By creating 2.0 at% cobalt deficiency in Ca_2.7Bi_0.3Co₄O_9+δ, the pressureless sintered ceramics reached the highest power factor of 98.0 μWm^?1 K^-2 at 823 K, through enhancement of electrical conductivity by reduction of poorly conducting secondary phases. Subsequently, textured thick films of Ca_2.7Bi_0.3Co_3.92O_9+δ were efficiently tailored by controlling the sintering temperature and holding time. Optimized Ca_2.7Bi_0.3Co_3.92O_9+δ thick films sintered at 1203 K for 8 h exhibited the maximum power factor of 55.5 μWm^?1 K^-2 at 673 K through microstructure control.     

Ion migration behavior and its interaction with sintering environment in cation conductor during flash sintering

Flash sintering has been reported in various ceramics. Nevertheless, anion and cation conductors exhibit different flash-sintering behaviors, and the interaction mechanism between the conductive species and the sintering environment has remained unclear. Herein, we report the flash-sintering phenomena of a typical cation conductor, Na₃Zr₂(SiO₄)₂(PO₄) with anode region surrounded by air and NaNO₃ environments. The results prove that the ionic behavior and joule heating distribution can be controlled by changing the electrode environment. Four possible scenarios describing the ion migration behavior and interaction with the environment are proposed for providing a guidance for controlling the ion interaction behavior during flash sintering.     

Preparation and electrical conductivity of KTaO3-based proton conductor

KTaO₃ and KTa_0.9M_0.1O_3-α (M = Ti, Hf, Zr) were prepared by solid state reaction at 1330 °C for 2 h and characterized by x-ray diffraction. The AC impedance technique was used to analyze the sintered solid electrolytes in 1%H₂/Ar and dry air atmosphere. Among KTa_0.9M_0.1O_3-α (M = Ti, Hf, Zr), KTa_0.9Zr_0.1O_3-α displays the highest conductivity in 1%H₂/Ar atmosphere. The carriers transport numbers of solid electrolytes were measured by concentration cell method. The results show KTa_0.9Zr_0.1O_3-α is a pure proton conductor below 525 °C. Stability tests show that KTa_0.9Zr_0.1O_3-α has good chemical stability against CO₂ and H₂O.     

Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films

In this work, we introduced a simple solution processing method to prepare yttrium (Y) doped hafnium oxide (HfO₂) based dielectric films. The films had high densities, low surface roughness, maximum permittivity of about 32, leakage current < 1.0 × 10^?7 A/cm² at 2 MV/cm, and breakdown field >5.0 MV/cm. In addition to dielectric performance, we investigated the influence of YO_1.5 fraction on the electronic structure between Y doped HfO₂ thin films and silicon (Si) substrates. The valence band electronic structure, energy gap and conduction band structure changed linearly with YO_1.5 fraction. Given this cost-effective deposition technique and excellent dielectric performance, solution-processed Y doped HfO₂ based thin films have the potential for insulator applications.     

Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices.     

Development of cellulose nanofibrils reinforced polyvinyl alcohol films incorporated with alizarin for intelligent food packaging

Visual pH-sensing films were fabricated using cellulose nanofibrils (CNF) reinforced polyvinyl alcohol (PVA) and alizarin. The relationships between the ratio of PVA: CNF hydrogel (2:1, 1:1, 1:2) and the physical properties and colour response efficiency of indicator films were investigated. Fourier transform infrared spectroscopy of films evidenced alizarin and CNF was properly incorporated by physical interaction. A new weak X-ray diffraction peak appeared at 2θ = 22.4°, which was affected by the incorporation of CNF. The increase in the CNF content induced enhancements of thermal stability, tensile strength, water contact angle and colour sensitivity of the indicator films. The colourimetric films had a higher sensitivity to discolouration when exposed to acidic vapours than alkaline vapours. The films presented a remarkable colour change varied from purple in alkaline condition to yellow in acidic condition. Therefore, this colourimetric film can be used as a volatile acid sensor for intelligent packaging.     

Preparation and Characterization of Hydrophobic Bagasse Hemicellulose-based Films

To improve the hydrophobicity of bagasse hemicellulose-based films, glutaraldehyde was applied when preparing films of original and cationic bagasse hemicellulose with the addition of polyvinyl alcohol and sorbitol. The results showed that the cationic modification could increase the hydrophobicity of the hemicellulose-based film, and the hydrophobicity of hemicellulose-based films crosslinked with glutaraldehyde also increased. However, cationic modification of hemicellulose decreased the stress of the hemicellulose-based film. While crosslinking with glutaraldehyde increased the stress of both the original and cationic hemicellulose-based films. Macrophotography indicated that the film formability of the original hemicellulose was better than that of cationic hemicellulose. Through SEM observation, the degree of bonding of different components of the films was found to be increased due to crosslinking with glutaraldehyde. The crosslinking reaction between glutaraldehyde and hemicellulose was further confirmed by FT-IR spectroscopy.     

Fabrication of BSCF-based mixed ionic-electronic conducting membrane by electrophoretic deposition for oxygen separation application

Ba_0.5Sr_0.5Co_0.8Fe_0.2O_3-δ (BSCF), which exhibits a high mixed oxide ionic-electronic conduction, was used for the fabrication of an oxygen separation membrane. An asymmetric structure, which was a thin and dense BSCF membrane layer supported on a porous BSCF substrate, was fabricated by the electrophoretic deposition method (EPD). Porous BSCF supports were prepared by the uniaxial pressing method using a powder mixture with BSCF and starch as the pore-forming agent (0–50 wt.%). The sintering behaviors of the porous support and the thin layer were separately characterized by dilatometry to determine the co-fired temperature at which cracking did not occur. A crack-free and thin dense membrane layer, which had about a 15 μm thickness and >95% relative density, was obtained after optimizing the processes of EPD and sintering. The dense/porous interface was well-bonded and the oxygen permeation flux was 2.5 ml (STP) min⁻¹ cm^-2 at 850 °C.